issue 1 - may 2006 1 www.zetex.com ? zetex semiconductors plc 2006 zxtn25020bfh 20v, sot23, npn medium power transistor summary bv cex > 50v bv ceo > 20v bv eco > 3v i c(cont) = 4.5a v ce(sat) < 45 mv @ 1a r ce(sat) = 27 m p d = 1.25w complementary part number zxtp25020bfh description advanced process capability and package design have been used to maximize the power handling and pe rformance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? high power dissipation sot23 package high peak current low saturation voltage 50v forward blocking voltage 3v reverse blocking voltage applications mosfet gate drivers motor control dc-dc converters ordering information device marking 1b1 device reel size (inches) tape width (mm) quantity per reel ZXTN25020BFHTA 7 8 3,000 c e b c e b pinout - top view
zxtn25020bfh issue 1 - may 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 50 v collector-emitter voltage (forward blocking) v cex 50 v collector-emitter voltage v ceo 20 v emitter-collector voltage (reverse blocking) v eco 3v emitter-base voltage v ebo 7v continuous collector current (c) i c 4.5 a base current i b 1a peak pulse current i cm 10 a power dissipation at t amb =25c (a) p d 0.73 w linear derating factor 5.84 mw/c power dissipation at t amb =25c (b) p d 1.05 w linear derating factor 8.4 mw/c power dissipation at t amb =25c (c) p d 1.25 w linear derating factor 9.6 mw/c power dissipation at t amb =25c (d) p d 1.81 w linear derating factor 14.5 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal graphs parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
zxtn25020bfh issue 1 - may 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
zxtn25020bfh issue 1 - may 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 50 90 v i c = 100 a collector-emitter breakdown voltage (forward blocking) bv cex 50 90 i c = 100 a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) bv ceo 20 27 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo 78 vi e = 100 a emitter-collector breakdown voltage (reverse blocking) bv ecx 67 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 34.7 vi e = 100 a, collector-base cut-off current i cbo <1 50 20 na a v cb = 40v v cb = 40v, t amb = 100c collector-emitter cut-off current i cex - 100 na v ce = 40v; r be < 1k or -1v < v be < 0.25v emitter-base cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 35 45 mv i c = 1a, i b = 100ma (*) 55 80 mv i c = 1a, i b = 20ma (*) 90 115 mv i c = 2a, i b = 40ma (*) 175 240 mv i c = 4.5a, i b = 90ma (*) 120 145 mv i c = 4.5a, i b = 450ma (*) base-emitter saturation voltage v be(sat) 910 1000 mv i c = 4.5a, i b = 90ma (*) base-emitter turn-on voltage v be(on) 825 900 mv i c = 4.5a, v ce = 2v (*) static forward current transfer ratio h fe 100 200 300 i c = 10ma, v ce = 2v (*) 100 210 i c = 1a, v ce = 2v (*) 75 160 i c = 4.5a, v ce = 2v (*) 30 70 i c = 10a, v ce = 2v (*) transition frequency f t 185 mhz i c = 50ma, v ce = 10v f = 100mhz output capacitance c obo 22.7 30 pf v cb = 10v, f = 1mhz (*) delay time t d 87 ns v cc = 10v. i c = 1a, i b1 = i b2 = 10ma. rise time t r 119 ns storage time t s 146 ns fall time t f 61 ns
zxtn25020bfh issue 1 - may 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
zxtn25020bfh issue 1 - may 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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